Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier

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概要

• 論文の詳細を見る

• Iridium nanocrystals (Ir-NCs) lying on the Si3N4/SiO2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of ${\sim}6\times 10^{11}$ cm-2 and a particle diameter of 4 to 12 nm can successfully be fabricated as charge trapping centers. Owing to the asymmetric SiO2/Si3N4 tunneling layer that increases programming/erasing efficiency, a significant memory window of 5.5 V has potential to be applied to multibit memory devices. Furthermore, after $10^{4}$ s, the memory window is still about 4.0 V in logic states.

• 2011-05-25

著者

• Hsieh Ing-Jar

  Department of Electric Engineering, Chung Hua University, Hsinchu 30012, Taiwan

• Kuo Cheng-Tzu

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

• Kuo Cheng-Tzu

  Department of Materials Science and Engineering, MingDao University, Changhua 523, Taiwan

• Wu Chien-Hung

  Department of Electronics Engineering, Chung Hua University, Hsinchu 30012, Taiwan, R.O.C.

• Wu Chien-Hung

  Department of Microelectronics Engineering, Chung Hua University, Hsinchu 30012, Taiwan

• Wang Terry

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

• Lu Tien-Lin

  Department of Electric Engineering, Chung Hua University, Hsinchu 30012, Taiwan

• Liu Yu-Cheng

  Department of Electric Engineering, Chung Hua University, Hsinchu 30012, Taiwan

• Hung Shih-Wei

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

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