Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process

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概要

• 論文の詳細を見る

• Processes for fabricating a Ni nanocrystal (NC)-assisted low-temperature polycrystalline silicon thin film transistor (LTPS-TFT) nonvolatile memory device of noble stack below 600 °C were successfully developed. The NCs were fabricated in H-plasma atmosphere by heating a nanosized Ni film to realize an appropriate nanoparticle distribution. Results show that NCs with a number density of ${\sim}5\times 10^{11}$ cm-2 and a particle diameter of 4 to 12 nm can successfully be fabricated as charge-trapping centers for enhancing the device performance. The results also indicate that the data retentions at the initial time and after $10^{4}$ s for a SiO2/Ni-NCs/Si3N4/SiO2 gate under the present stack of devices are about 2.2 and ${\sim}1.1$ V, respectively.

• 2010-06-25

著者

• William Cheng-Yu

  Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan

• Cheng-Tzu Kuo

  Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan

• Wang Terry

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

• Terry Tai-Jui

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

• Gao Pei-Ling

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

• Ma William

  Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan

• Pei-Ling Gao

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

関連論文

• Nickel nanocrystals embedded in metal-alumina-nitride-oxide-silicon type low-temperature polycrystalline-silicon thin-film transistor for low-voltage nonvolatile memory application (Special issue: Microprocesses and nanotechnology)
• Low-Temperature Polycrystalline Silicon Thin Film Transistor Nonvolatile Memory Using Ni Nanocrystals as Charge-Trapping Centers Fabricated by Hydrogen Plasma Process
• Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier

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