Metal Oxide Film for Growing Vertically Aligned Single-Walled Carbon Nanotubes

スポンサーリンク

概要

• 論文の詳細を見る

• In the present study, we use a method that uses the oxidation state of platinum in Co–Cr–Pt oxide films to cause a volume expansion to form isolated nanoparticles through exposure to H2 microwave plasma. The generated nanoparticles are then used to grow single-walled carbon nanotubes (SWCNTs) at ${\sim}600$ °C without the application of a buffer layer using a microwave plasma chemical vapor deposition system. The effects of metal oxide film thickness on the growth of SWCNTs are investigated. The characterization techniques including X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy are carried out, with the results showing that this method used is highly efficient in generating very small and dense catalytic nanoparticles. The results also show that, when the metal oxide film thickness is no more than 2 nm, the nanoparticles produced with diameters ranging from 2 to 3 nm can be effective for growing vertically and densely aligned SWCNTs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-08-25

著者

• Kuo Cheng-Tzu

  Department of Materials Science and Engineering, MingDao University, Changhua 523, Taiwan

• Wang Wei-Hsiang

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Hong Tasi-Hau

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Tseng Wen-Shou

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

関連論文

• Nickel nanocrystals embedded in metal-alumina-nitride-oxide-silicon type low-temperature polycrystalline-silicon thin-film transistor for low-voltage nonvolatile memory application (Special issue: Microprocesses and nanotechnology)
• Evolution of Fluorine Content with Precipitate Formation in Fluorine-Doped Silicon Oxide
• Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier
• Metal Oxide Film for Growing Vertically Aligned Single-Walled Carbon Nanotubes

スポンサーリンク