Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium--Zinc Oxide Current Spreading Layer
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概要
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The performance of vertically structured GaN-based light-emitting diodes (VLEDs) with an efficient surface roughening scheme that uses KrF laser irradiation, chemical wet etching, and an indium--zinc oxide (IZO) transparent conductive layer atop the n-GaN surface is investigated. The GaN surface, with circular protrusions and hexagonal cones, gives photons multiple opportunities to find escape cones, and the IZO film acts as a current spreading layer. The fabricated VLEDs with the proposed surface roughening scheme exhibited 79.3 and 65.1% increases in light output power at 350 and 750 mA, respectively, and showed a relatively low forward voltage compared to that of regular VLEDs.
- 2011-07-25
著者
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CHEN Tron-Min
Department of Electrical Engineering, Wu-Feng Institute of Technology
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Kuo Der-ming
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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LEE Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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WANG Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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WANG Po-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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