Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate

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概要

• 論文の詳細を見る

• The use of indium--zinc oxide (IZO) as a transparent conduction layer (TCL) for electroplated nickel metal substrate AlGaInP light-emitting diodes with a $300\times 300$ μm2 chip size was investigated with regard to both fabrication and effectiveness in improving light extraction efficiency. A metal system consisting of AuGe/Au was deposited to form ohmic contact dots for the n+-GaAs layer, and then an IZO film was deposited to serve as a TCL. Compared with conventional light emitting diodes (LEDs) with GaAs substrates, the proposed LEDs show an increase in light output power (i.e., $\Delta L_{\text{op}}/L_{\text{op}}$) by 116.7% at 20 mA and 168.9% at 100 mA.

• 2011-01-25

著者

• CHEN Tron-Min

  Department of Electrical Engineering, Wu-Feng Institute of Technology

• WANG Pei-Ren

  Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ.

• Kuo Der-ming

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Tron-Min

  Department of Electrical Engineering, WuFeng University, Chia-yi Country, Taiwan 621, R.O.C.

• Uang Kai-Ming

  Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China

• Uang Kai-Ming

  Department of Electrical Engineering, WuFeng University, Chia-yi Country, Taiwan 621, R.O.C.

• LEE Wei-Chi

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• Wang Shui-Jinn

  Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.

• Kuo Der-Ming

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.

• WANG Pei-Ren

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• Wang Pei-Ren

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.

• Wang Shui-Jinn

  Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.

関連論文

• Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique
• High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
• A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
• Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
• Preparation of p-SnO/n-ZnO Heterojunction Nanowire Arrays and Their Optoelectronic Characteristics under UV Illumination
• Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate
• Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
• Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
• Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium--Zinc Oxide Current Spreading Layer
• Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods
• Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers

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