High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
Wang Shui-jinn
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
-
CHEN Shiue-Lung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
-
UANG Kai-Ming
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
-
WU Chin-Kun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
-
Wu Chin-kun
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
Chen Shiue-lung
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
-
CHEN Tron-Min
Department of Electrical Engineering, Wu-Feng Institute of Technology
-
Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
Chen Tron-min
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
-
Uang Kai-ming
Dept. Of Electrical Eng. Wu Feng Institute Of Technology
関連論文
- High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
- Robust High-κ HfO_xN_y n-MOSFETs Using Low Work Function TbN Gate
- Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique
- A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
- Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate
- A screen-printed Sn-based substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes (Special issue: Solid state devices and materials)
- High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
- Development of gas sensors based on tungsten oxide nanowires in a metal/SiO_2/metal structure and their sensing responses to NO_2
- A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
- Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates (Special Issue: Solid State Devices & Materials)
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
- The Role of High-$\kappa$ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
- High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
- Low Driving Voltage Amorphous In--Ga--Zn--O Thin Film Transistors with Small Subthreshold Swing Using High-$\kappa$ Hf--Si--O Dielectrics
- Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate
- Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
- The Influence of Carbon Content on Material and Field Emission Properties of Nanowires Self-synthesized from Sputter-deposited WC_x Films
- The Influence of Oxygen Concentration in the Sputtering Gas on the Self-synthesis of Tungsten Oxide Nanowires on Sputter-deposited Tungsten Films
- Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
- Development of Gas Sensors Based on Tungsten Oxide Nanowires in Metal/SiO2/Metal Structure and Their Sensing Responses to NO2
- Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium--Zinc Oxide Current Spreading Layer
- A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods
- Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates
- Characterization of Hf1-xZrxO2 Gate Dielectrics with 0\leq x\leq 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
- High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
- Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers
- Preparation and Characteristic of Relative-Humidity Sensors Based on Laterally Grown ZnO Nanowires