Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates (Special Issue: Solid State Devices & Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Chen Shiue-lung

  Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.

関連論文

• High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
• Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique
• A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
• Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate
• High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
• A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
• Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates (Special Issue: Solid State Devices & Materials)
• Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
• A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
• Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates
• High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films

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