Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates

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概要

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• Large-area ($0.6 \times 0.6$ and $1 \times 1$ mm2) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power ($L_{\text{op}}$) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in $L_{\text{op}}$ by 227% (195%) at 350 (800) mA has been achieved for the ($1 \times 1$ mm2)-sized VM-LEDs.

• 2006-04-30

著者

• Liou Bor-wen

  Department Of Computer Science And Information Engineering Wu-feng Institute Of Technology

• UANG Kai-Ming

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• Yang Yu-cheng

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Shiue-lung

  Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.

• Wang Shui-jinn

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Tron-min

  Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.

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