Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
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概要
- 論文の詳細を見る
GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1 mm2 show a typical increase in light output power by 68% at 350 mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.
- 2011-04-25
著者
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CHEN Tron-Min
Department of Electrical Engineering, Wu-Feng Institute of Technology
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Kuo Der-ming
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chen Tron-Min
Department of Electrical Engineering, WuFeng University, Chia-yi Country 621, Taiwan, Republic of China
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng University, Chia-yi Country 621, Taiwan, Republic of China
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LEE Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Lee Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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WANG Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Wang Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Wang Po-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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WANG Po-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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