Preparation and Characteristic of Relative-Humidity Sensors Based on Laterally Grown ZnO Nanowires
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概要
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The use of laterally oriented zinc oxide nanowires (ZnO NWs) grown by a hydrothermal growth (HTG) method for relative-humidity (RH) sensing devices at room temperature (RT) is demonstrated. Sensing response under various RH conditions (12--96%) at RT is presented and discussed. A humidity sensor based on laterally oriented ZnO NWs with a sensing response (R_{12\%}/R_{96\%}) as high as 2.2 was obtained at RT. The RT-operable humidity-sensing characteristics with comparably good sensitivity of the proposed humidity sensors is attributed to the full utilization of the entire NW surface, because the current path is aligned with the orientation of the bridged lateral ZnO NWs during the humidity sensing application, thus making possible.
- 2013-06-25
著者
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Tu Yung-Chun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Lin Tseng-Hsing
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Tsai Fu-Shou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Tsai Fu-Shou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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