Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
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概要
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Through the deposition of a thin SiO2 film to sheathe hydrothermally grown (HTG) ZnO nanowires (ZnO-NWs), unveiling their top portion, and then selectively removing ZnO-NWs by wet chemical etching, SiO2 nanotubes (SiO2-NTs) with controllable inner/outer diameters and lengths were fabricated. The prepared SiO2-NTs with average inner/outer diameters and lengths of approximately 200/300 nm and 1.5 μm, respectively, exhibited a superior transmittance of 92% in the visible light spectrum. The surface roughened process using SiO2-NTs on vertical-structure GaN light-emitting diodes (VLEDs) showed additional light output improvement of about 11.6% at 350 mA and 10% at 750 mA, compared with those of VLEDs with ZnO-NWs, suggesting the effectiveness and promising applications of the proposed SiO2-NTs in optics and optoelectronics devices.
- 2010-04-25
著者
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Kuo Der-ming
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Wei-Chih Tsai
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Tron-Min Chen
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Tron-Min Chen
Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Wen-I Hsu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Wei-Chi Lee
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Pei-Ren Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Chih-Ren Tseng
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Kai-Ming Uang
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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