Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers

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概要

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• A new two-step hydrothermal growth (HTG) process with a shorter processing time and better growth control is proposed for the synthesis of ZnO nanotapers (NTs). The application of HTG ZnO NTs as surface roughening nanostructures to improve the light output power (L_{\text{op}}) of GaN-based LEDs is demonstrated. Compared with that of ZnO nanowires, the use of ZnO NTs leads to an improvement in L_{\text{op}} by 24.5% at 350 mA, which could be attributed to the fact that tapered ends of ZnO NTs offer more constructive photon scattering to maximize light extraction.

• 2013-06-25

著者

• CHEN Tron-Min

  Department of Electrical Engineering, Wu-Feng Institute of Technology

• Wang Shui-jinn

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Uang Kai-Ming

  Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China

• Tu Yung-Chun

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.

• Lin Tseng-Hsing

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

• Lin Jia-Ching

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

• Chen Tron-Min

  Department of Electrical Engineering, WuFeng University, Chiayi 621, Taiwan

• Wang Shui-Jinn

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

• Tsai Fu-Shou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

• Tu Yung-Chun

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

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