Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
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概要
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The performance of vertical-structure metallic-substrate GaN-based light-emitting diodes (VM-LEDs) with a patterned SiO2 film as the current-blocking layer (CBL) was investigated. From theoretical calculations of current and light distributions and experimental results on current–voltage ($I$–$V$) and light output power–current ($L$–$I$) characteristics, we found that SiO2 CBL inserted under the n-pad electrode increases light output power by 35.4% at 20 mA as compared with VM-LEDs without CBL. Such an improvement is attributed to the insulated CBL structure, which provides better current spreading and less photon absorption and/or reflection at the n-electrode.
- 2009-10-25
著者
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KUAN Hon
Department of Electrical Engineering, Far East University
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Chen Shiue-lung
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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CHEN Tron-Min
Department of Electrical Engineering, Wu-Feng Institute of Technology
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Wang Yu-yu
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chen Tron-Min
Department of Electrical Engineering, WuFeng Institute of Technology, Chiayi 621, Taiwan, R.O.C.
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chiayi 621, Taiwan, R.O.C.
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LEE Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Wang Shui-Jinn
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Kuan Hon
Department of Electrical Engineering Far East College, Tainan 744, Taiwan
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Kuan Hon
Department of Electro-Optical Engineering, Southern Taiwan University of Technology, Tainan 701, Taiwan, R.O.C.
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Chen Shiue-Lung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Wang Yu-Yu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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