AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers

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概要

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• We report the fabrication of AlGaN metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were $8.3\times 10^{-9}$, $3.3\times 10^{-12}$, and $1.1\times 10^{-12}$ A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361, 0.0328, and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

• 2007-04-30

著者

• Lin Ray-ming

  Department Of Electrical Engineering National Central University

• HUNG Hung

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• LIN Yi-Chao

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• KUAN Hon

  Department of Electrical Engineering, Far East University

• Wu Ming-hsien

  Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit

• Lin Ray-Ming

  Department of Electronics Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

• Kuan Hon

  Department of Electrical Engineering Far East College, Tainan 744, Taiwan

• Lin Yi-Chao

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

• Hung Hung

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

• Wu Ming-Hsien

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

• Chang Shoou-Jinn

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

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