On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector

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概要

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• In this study, we investigated the influence of ion implantation and post-implantation rapid thermal anneal (RTA) on the reflectivity spectrum of an AlGaAs distributed Bragg reflector (DBR). The peak wavelength of the reflectivity spectrum shifts toward longer wavelengths and the background reflectance increases after ion implantation. The calculated spectrum agrees well with the experimental observation. It can be used to understand the mechanisms of ion implantation on the reflectivity spectra. Four different ions (H+, O+, Si+ and P+) were implanted into DBR for comparison. Among these samples, the Si-implanted DBR has the largest amount of red-shift, and the hydrogen-implanted DBR are almost the same as unimplanted. In addition, post-implantation RTA would shift the reflectivity band back to its original position and lead to the recovery of the background reflectance, but degrade peak reflectance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Hsieh Li-zen

  Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University

• Lin Ray-ming

  Department Of Electrical Engineering National Central University

• Chang Liann-be

  Department Of Applied Physics Chung-cheng Institute Of Technology

• Jeng Ming-jer

  Department Of Electrical Engineering National Taiwan University

• Kuei Ping-yu

  Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University

• Chang Liann-Be

  Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan, Taiwan 335, R.O.C.

• Hsieh Li-Zen

  Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan, Taiwan 335, R.O.C.

• Lin Ray-Ming

  Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan, R.O.C.

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