Growth Evolution of ZrO2 from Deposited Zr Metal during Thermal Oxidation
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概要
- 論文の詳細を見る
This work reveals how oxidation temperature affects the diffusion of Zr, the reaction behavior of oxygen and silicon atoms in the interior stacked layer structure and the corresponding crystalline phase of oxide. The depth distributions of the three important inclusive atoms Zr, O, and Si are experimentally determined.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-10-15
著者
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Hsieh Li-zen
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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Kuei Ping-yu
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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Hsieh Li-Zen
Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, R.O.C.
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Ko Hong-Hsi
Department of Computer Science and Information Engineering, Nan Kai Institute of Technology, Caotun, Nantou 542, Taiwan, R.O.C.
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Lee Ching-Yuan
Chung Shan Institute of Science and Technology, Lungtan, Taoyuan 325, Taiwan, R.O.C.
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