Properties of Thermal Gadolinium Oxide Films on Silicon
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Chang L‐b
Chung Cheng Inst. Technol. Taoyuan Twn
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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JENG Ming-Jer
Department of Electronic Engineering, St. John's & St. Mary's Institute of Technology
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Kuei Ping-yu
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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KO Hong-Hsi
Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense Universi
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HORNG Kuo-Yang
Chung Shan Institute of Science and Technology
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- Gettering Properties in Praseodymium-Added Crystal Growth
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- Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
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- The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
- Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
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- Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
- Study of the Fourier-Transform Infrared Spectra of InAs/GaAs Quantum Dot Superlattices for Far-Infrared Photodetectors
- High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
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