Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
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概要
- 論文の詳細を見る
The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The Schottky gate breakdown voltage enhances from 8 V to 15 V, and a power-added efficiency (PAE) improves from 38% to 43% at 1.8 GHz.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-01-15
著者
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Yang Shih-cheng
Department Of Electrical Engineering National Central University Jungli
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Hwu Ming-jyh
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Chiu Hsien-chin
Department Of Electrical Engineering National Central University
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Chang Liann-Be
Department of Electrical Engineering, Chung Cheng Institute of Technology, Tashi Taoyuan, Taiwan 335, R.O.C.
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Hwu Ming-Jyh
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
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Yang Shih-Cheng
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
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