High Linearity and High Power Device Fabricated by Al_<0.3>Ga_<0.7>As/In_<0.15>Ga_<0.85>As Double Doped-Channel Heterostructure

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Chien Feng-Tso

  R&D Dept. Chino-Excel Technology Corp.

• Chien Feng-tso

  R&d Dept. Chino-excel Technology Corp.

関連論文

• InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
• InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
• The low-k BCB passivation layer on the GaN HEMTs
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
• A Noble Capacitive-Peaking Transimpedance Amplifier with High Linearity Gain Active Feedback Design
• A Novel HBT with Composite Collector for Power Amplifier Application
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
• Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model
• High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures

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