InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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Wang Wen-kai
Department Of Electrical Engineering National Central University
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Shi Jin-wei
Department Of Electrical Engineering National Central University
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CHIU Wei-Yu
Department of Electrical Engineering, National Central University
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WU Yen-Shiang
Department of Electrical Engineering, National Central University
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HUANG Fan-Hsiu
Department of Electrical Engineering, National Central University
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LIN Dong-Ming
Department of Electrical Engineering, National Central University
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WU Yen-Shian
Department of Electrical Engineering, National Central University
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LIN Don-Ming
Department of Electrical Engineering, National Central University
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Lin Don-ming
Department Of Electrical Engineering National Central University
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Lin Dong-ming
Department Of Electrical Engineering National Central University
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Chiu Wei-yu
Department Of Electrical Engineering National Central University
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Wu Yen-shian
Department Of Electrical Engineering National Central University
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Huang Fan-hsiu
Department Of Electrical Engineering National Central University
関連論文
- InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
- InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
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