Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)

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概要

• 論文の詳細を見る

• A modified 0.35 μm gate-length MOSFFT large-signal microwave device model, based on the widely use BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMO; large-signal model. The input 1M3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

• 社団法人電子情報通信学会の論文
• 2004-01-01

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Sato Takuro

  Niigata Institute Of Technology

• Sato Takuro

  Department Of Information And Electronics Engineering Niigata Institute Of Technology

• Sato Takahide

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

• Hslao Chao-chih

  Department Of Electrical Engineering National Central University

• Sato T

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• LAI Hong-Hsin

  Department of Information and Electronics Engineering, Niigata Institute of Technology

• KUO Chin-Wei

  Department of Electrical Engineering, National Central University

• Kuo Chin-wei

  Department Of Electrical Engineering National Central University

• Lai Hong-hsin

  Department Of Information And Electronics Engineering Niigata Institute Of Technology

• Takagi Shigetaka

  Tokyo Inst. Of Technol. Tokyo Jpn

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