InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Chan Yi-jen
Department Of Electrical Engineering National Central University
-
Wang Wen-kai
Department Of Electrical Engineering National Central University
-
Shi Jin-wei
Department Of Electrical Engineering National Central University
-
CHIU Wei-Yu
Department of Electrical Engineering, National Central University
-
HUANG Fan-Hsiu
Department of Electrical Engineering, National Central University
-
WU Yen-Shian
Department of Electrical Engineering, National Central University
-
LIN Don-Ming
Department of Electrical Engineering, National Central University
-
Lin Don-ming
Department Of Electrical Engineering National Central University
-
Chiu Wei-yu
Department Of Electrical Engineering National Central University
-
Wu Yen-shian
Department Of Electrical Engineering National Central University
-
Huang Fan-hsiu
Department Of Electrical Engineering National Central University
関連論文
- InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
- InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
- The low-k BCB passivation layer on the GaN HEMTs
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
- Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model
- High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures