Characteristics of In_<0.3>Ga_<0.7>As/In_<0.29>Al_<0.71>As Heterostructures Grown on GaAs Using InAlAs Buffers

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概要

• 論文の詳細を見る

• Device quality In_<0.29>Al_<0.71>As and In_<0.3>Ga_<0.7>As epilayers have been successfully grown on GaAs substrates using a carefully designed In_xAl_<1-x>As multistage strain-relaxed buffer. Cross-sectional transmission electron microscopy has shown that the misfit dislocations are confined in the lowrer regions of the metamorphic buffer layer. The Hall electron mobility of the modulation doped structure grown on the InAlAs buffer was 6160 and 25379 cm^2/V・s with sheet carrier densities of 1.9×10^<12> and 1.8×10^<12> cm^<-2> at 300 and 77 K, respectively. The excellent characteristics of the held-effect transistors fabricated on this structure have indicated its potential for practical applications.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• LIN Ray-Ming

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Lin Ray-ming

  Department Of Electrical Engineering National Central University

• CHYI Jen-Inn

  Department of Electrical Engineering, National Central University

• Shieh Jia-lin

  Department Of Electrical Engineering National Central University

• Chyi Jen-inn

  Department Of Electrical Engineering National Central University

• PAN Jen-Wei

  Department of Electrical Engineering, National Central University

• Pan Jen-wei

  Department Of Electrical Engineering National Central University

• WU Chia-Song

  Department of Electrical Engineering, National Central University

• LIN Chun-Hong

  Materials Research Laboratories, Industrial Technology Research Institute

• Lin Chun-hong

  Materials Research Laboratories Industrial Technology Research Institute

• Wu C‐s

  Compaq Computer Corp. Texas Usa

関連論文

• Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
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• InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
• The low-k BCB passivation layer on the GaN HEMTs
• Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
• Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
• The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
• InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices
• Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
• AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
• Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model
• High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
• Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
• AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures
• Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
• Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
• Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y
• Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer

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