InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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CHYI Jen-Inn
Department of Electrical Engineering, National Central University
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Shiau Meng-jie
Department Of Electrical Engineering National Central University
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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Chang Mao-nan
National Nano Device Laboratories
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CHIU Pei-Chin
Department of Electrical Engineering, National Central University
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HSIEH Tung-Po
Department of Electrical Engineering, National Central University
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Hsieh Tung-po
Department Of Electrical Engineering National Central University
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Chiu Pei-chin
Department Of Electrical Engineering National Central University
関連論文
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
- The low-k BCB passivation layer on the GaN HEMTs
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
- Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
- InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices
- Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
- Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y