Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y

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概要

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• Y<inf>2</inf>O<inf>3</inf>and Al<inf>2</inf>O<inf>3</inf>were deposited onto GaSb(100) surfaces by molecular beam epitaxy and atomic layer deposition, respectively. Angle-resolved X-ray photoelectron spectroscopy and electrical measurements were used to probe the two oxide/semiconductor interfaces, which yielded very different behaviors. Highly surface-sensitive scans showed traces of SbO<inf>x</inf>and AsO<inf>x</inf>at the Y<inf>2</inf>O<inf>3</inf>surface, which were removed during subsquent ALD Al<inf>2</inf>O<inf>3</inf>. The deposition of Y<inf>2</inf>O<inf>3</inf>led to true inversion as indicated in capacitance--voltage (C--V) characteristics, small hysteresis and frequency dispersion, and low gate leakage. In contrast, for Al<inf>2</inf>O<inf>3</inf>/GaSb, the GaSb remained virtually intact, with Al<inf>2</inf>O<inf>3</inf>bonding to the residual As, leading to poor C--V characteristics.

• 2013-12-25

著者

• PI Tun-Wen

  National Synchrotron Radiation Research Center

• Chyi Jen-inn

  Department Of Electrical Engineering National Central University

• Lin Hsiao-yu

  Department Of Materials Science And Engineering National Chiao Tung University

• Kwo J.

  Department Of Physics National Tsing Hua University

• Chiang Tsung-Hung

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

• Hong Minghwei

  Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan 10617, R.O.C.

• Kwo J.

  Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

• Chu Rei-Lin

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Hsueh Wei-Jen

  Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan

• Lee Wei-Chin

  Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

• Lin Tsung-Da

  Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• Brown Gail

  Air Force Research Laboratory (AFRL), Dayton, OH 45433, U.S.A.

• Huang Tsung-Shiew

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Chiang Tsung-Hung

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Pi Tun-Wen

  National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

• Hong Minghwei

  Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• Lin Hsiao-Yu

  Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

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