III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High $\kappa$ Dielectrics

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概要

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• Research efforts on achieving low interfacial density of states ($D_{\text{it}}$) as well as low electrical leakage currents on GaAs-based III–V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atomic layer deposition (ALD)-Al2O3 on GaAs and InGaAs. Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium-gadolinium-garnet target, has, for the first time, unpinned the Fermi level of the oxide/GaAs heterostructures. Interfacial chemical properties and band parameters of valence band offsets and conduction band offsets in the oxides/III–V heterostructures are studied and determined using X-ray photoelectron spectroscopy and electrical leakage transport measurements. The mechanism of III–V surface passivation is discussed. The mechanism of Fermi-level unpinning in ALD-Al2O3 ex-situ deposited on InGaAs were studied and unveiled. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of $10^{-8}$–$10^{-9}$ A/cm2 and low $D_{\text{it}}$'s in the range of $(4--9)\times 10^{10}$ cm-2 eV-1 for Ga2O3(Gd2O3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga2O3(Gd2O3)/GaAs heterostructures was achieved with high temperature annealing, which is needed for fabricating inversion-channel metal–oxide–semiconductor filed-effect transistors (MOSFET's). The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness. Device performances of inversion-channel and depletion-mode III–V MOSFET's are reviewed, again with emphasis on the devices using Ga2O3(Gd2O3) as the gate dielectric.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-05-30

著者

• Chen Chih-ping

  Department Of Medical Research Mackay Memorial Hospital

• Lin Tsung-da

  Department Of Materials Science And Engineering National Tsing Hua University

• Hong Minghwei

  Department Of Physics And Graduate Institute Of Applied Physics National Taiwan University

• Kwo J.

  Department Of Physics National Tsing Hua University

• Chang Yaochung

  Department Of Materials Science And Engineering National Tsing Hua University

• Huang Mao-Lin

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Tsai Pei-chun

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Lin Tsung-da

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Chen Chih-ping

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Kwo J.

  Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Hong Minghwei

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

• Chang Yaochung

  Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China

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