Achieving a Low Interfacial Density of States with a Flat Distribution in High-κ Ga_2O_3(Gd_2O_3) Directly Deposited on Ge
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概要
- 論文の詳細を見る
- 2011-11-25
著者
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Hong Minghwei
Department Of Physics And Graduate Institute Of Applied Physics National Taiwan University
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Chu Lungkun
Department Of Materials Science And Engineering National Tsing Hua University
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Chu Reilin
Department Of Materials Science And Engineering National Tsing Hua University
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Chiang Tsunghung
Department Of Materials Science And Engineering National Tsing Hua University
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Kwo J.
Department Of Physics National Tsing Hua University
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LIN Chunan
Department of Physics, National Tsing Hua University
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LIN Hanchung
Interuniversity Microelectronics Center (IMEC vzw)
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LIN Tsungda
Department of Materials Science and Engineering, National Tsing Hua University
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CHANG Yaochung
Department of Materials Science and Engineering, National Tsing Hua University
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WANG Wei-E
Interuniversity Microelectronics Center (IMEC vzw)
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Lin Chunan
Department Of Physics National Tsing Hua University
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Lin Tsungda
Department Of Materials Science And Engineering National Tsing Hua University
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Chang Yaochung
Department Of Materials Science And Engineering National Tsing Hua University
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Hong Minghwei
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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- Achieving a Low Interfacial Density of States with a Flat Distribution in High-κ Ga_2O_3(Gd_2O_3) Directly Deposited on Ge
- Atomic Force Microscopic Nanolithography on Hafnium Oxide Thin Film Grown on Si(100)
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