Self-Aligned Inversion-Channel In_<0.53>Ga_<0.47>As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al_2O_3/Y_2O_3 as Gate Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2011-11-25
著者
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Chang Pen
Department Of Veterinary Medicine College Of Agriculture National Taiwan University
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Chiu Han-chin
Department Of Materials Science And Engineering National Tsing Hua University
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LIN Tsung-Da
Department of Materials Science and Engineering, National Tsing Hua University
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HUANG Mao-Lin
Department of Physics, National Tsing Hua University
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CHANG Wen-Hsin
Department of Materials Science and Engineering, National Tsing Hua University
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WU Shao-Yun
Department of Materials Science and Engineering, National Tsing Hua University
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WU Kang-Hua
Department of Materials Science and Engineering, National Tsing Hua University
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HONG Minghwei
Department of Physics and Graduate Institute of Applied Physics, National Taiwan University
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KWO Jueinai
Department of Physics, National Tsing Hua University
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Wu Kang-hua
Department Of Materials Science And Engineering National Tsing Hua University
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Kwo Jueinai
Department Of Physics National Tsing Hua University
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Wu Shao-yun
Department Of Materials Science And Engineering National Tsing Hua University
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Lin Tsung-da
Department Of Materials Science And Engineering National Tsing Hua University
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Huang Mao-lin
Department Of Physics National Tsing Hua University
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Hong Minghwei
Department Of Physics And Graduate Institute Of Applied Physics National Taiwan University
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Chang Wen-hsin
Department Of Materials Science And Engineering National Tsing Hua University
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Chang Pen
Department Of Materials Science And Engineering National Tsing Hua University
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Huang Mao-Lin
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Hong Minghwei
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
関連論文
- 台湾のキンギョにおけるヘルペス様ウイルス感染症
- Self-Aligned Inversion-Channel In_Ga_As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al_2O_3/Y_2O_3 as Gate Dielectrics
- Achieving a Low Interfacial Density of States with a Flat Distribution in High-κ Ga_2O_3(Gd_2O_3) Directly Deposited on Ge
- Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
- Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al_2O_3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
- III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High $\kappa$ Dielectrics