Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
スポンサーリンク
概要
- 論文の詳細を見る
Guided by the known reconstruction of the GaAs(111)A-2\times 2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30\pm 0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25\pm 0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk line. Measureable surface effects are confined to the outermost mixed Ga and As layer. The effective spin--orbit ratios are typically below the standard value of 2/3 at kinetic energies near threshold. This phenomenon is related to final state of the excited photo-electron. The inelastic mean-free path was found to average 4 Å with a minimum near a kinetic energy of 80 eV.
- 2012-06-15
著者
-
PI Tun-Wen
National Synchrotron Radiation Research Center
-
Kwo Jueinai
Department Of Physics National Tsing Hua University
-
Hong Minghwei
Graduate Institute Of Applied Physics National Taiwan University
-
Huang Mao-Lin
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
-
Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
CHEN Bor-Rong
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Wertheim Gunther
Woodland Consulting, 175 Woodland Ave., Morristown, NJ 07960, U.S.A.
-
Pi Tun-Wen
National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076, R.O.C.
-
Kwo Jueinai
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Huang Mao-Lin
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan 10617, R.O.C.
-
Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
-
Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
関連論文
- 有機不揮発性メモリ素子モデル界面としての 2-amino-4,5-imidazoledicarbonitrile (AIDCN)-金属界面の電子構造
- Experimental study of Ag/LiF/PFO interface for Top Emission PLEDs by synchrotron radiation photoemission spectroscopy
- Self-Aligned Inversion-Channel In_Ga_As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al_2O_3/Y_2O_3 as Gate Dielectrics
- Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
- Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al_2O_3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
- III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High $\kappa$ Dielectrics
- Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y