Hong Minghwei | Graduate Institute Of Applied Physics National Taiwan University
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概要
関連著者
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Kwo Jueinai
Department Of Physics National Tsing Hua University
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Hong Minghwei
Graduate Institute Of Applied Physics National Taiwan University
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Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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PI Tun-Wen
National Synchrotron Radiation Research Center
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Heyns Marc
Katholieke Universiteit Leuven
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CHU Lung-Kun
Department of Materials Science and Engineering, National Tsing Hua University
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MERCKLING Clement
Interuniversity Microelectronics Center (IMEC vzw)
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DEKOSTER Johan
Interuniversity Microelectronics Center (IMEC vzw)
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HONG Minghwei
Graduate Institute of Applied Physics, National Taiwan University
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CAYMAX Matty
Interuniversity Microelectronics Center (IMEC vzw)
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Chu Lung-kun
Department Of Materials Science And Engineering National Tsing Hua University
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Huang Mao-Lin
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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CHEN Bor-Rong
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Wertheim Gunther
Woodland Consulting, 175 Woodland Ave., Morristown, NJ 07960, U.S.A.
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Pi Tun-Wen
National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076, R.O.C.
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Kwo Jueinai
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Huang Mao-Lin
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan 10617, R.O.C.
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Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
著作論文
- Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
- Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al_2O_3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)