Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al_2O_3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
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概要
- 論文の詳細を見る
- 2012-06-25
著者
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Kwo Jueinai
Department Of Physics National Tsing Hua University
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Heyns Marc
Katholieke Universiteit Leuven
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CHU Lung-Kun
Department of Materials Science and Engineering, National Tsing Hua University
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MERCKLING Clement
Interuniversity Microelectronics Center (IMEC vzw)
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DEKOSTER Johan
Interuniversity Microelectronics Center (IMEC vzw)
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HONG Minghwei
Graduate Institute of Applied Physics, National Taiwan University
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CAYMAX Matty
Interuniversity Microelectronics Center (IMEC vzw)
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Chu Lung-kun
Department Of Materials Science And Engineering National Tsing Hua University
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Hong Minghwei
Graduate Institute Of Applied Physics National Taiwan University
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Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
関連論文
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- Self-Aligned Inversion-Channel In_Ga_As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al_2O_3/Y_2O_3 as Gate Dielectrics
- Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
- Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al_2O_3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
- Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y