Huang Mao-Lin | Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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概要
- Huang Mao-Linの詳細を見る
- 同名の論文著者
- Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of Chinaの論文著者
関連著者
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Huang Mao-Lin
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Kwo Jueinai
Department Of Physics National Tsing Hua University
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Lin Tsung-da
Department Of Materials Science And Engineering National Tsing Hua University
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Hong Minghwei
Department Of Physics And Graduate Institute Of Applied Physics National Taiwan University
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Hong Minghwei
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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PI Tun-Wen
National Synchrotron Radiation Research Center
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Chang Pen
Department Of Veterinary Medicine College Of Agriculture National Taiwan University
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Chen Chih-ping
Department Of Medical Research Mackay Memorial Hospital
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Chiu Han-chin
Department Of Materials Science And Engineering National Tsing Hua University
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LIN Tsung-Da
Department of Materials Science and Engineering, National Tsing Hua University
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HUANG Mao-Lin
Department of Physics, National Tsing Hua University
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CHANG Wen-Hsin
Department of Materials Science and Engineering, National Tsing Hua University
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WU Shao-Yun
Department of Materials Science and Engineering, National Tsing Hua University
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WU Kang-Hua
Department of Materials Science and Engineering, National Tsing Hua University
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HONG Minghwei
Department of Physics and Graduate Institute of Applied Physics, National Taiwan University
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KWO Jueinai
Department of Physics, National Tsing Hua University
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Wu Kang-hua
Department Of Materials Science And Engineering National Tsing Hua University
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Wu Shao-yun
Department Of Materials Science And Engineering National Tsing Hua University
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Huang Mao-lin
Department Of Physics National Tsing Hua University
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Chang Wen-hsin
Department Of Materials Science And Engineering National Tsing Hua University
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Chang Pen
Department Of Materials Science And Engineering National Tsing Hua University
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Kwo J.
Department Of Physics National Tsing Hua University
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Chang Yaochung
Department Of Materials Science And Engineering National Tsing Hua University
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Hong Minghwei
Graduate Institute Of Applied Physics National Taiwan University
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Tsai Pei-chun
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Lin Tsung-da
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Chen Chih-ping
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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CHEN Bor-Rong
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Wertheim Gunther
Woodland Consulting, 175 Woodland Ave., Morristown, NJ 07960, U.S.A.
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Pi Tun-Wen
National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076, R.O.C.
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Kwo J.
Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Kwo Jueinai
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Huang Mao-Lin
Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
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Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan 10617, R.O.C.
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Chang Yaochung
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, Republic of China
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Chiang Tsung-Hung
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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Hong Minghwei
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
著作論文
- Self-Aligned Inversion-Channel In_Ga_As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al_2O_3/Y_2O_3 as Gate Dielectrics
- Surface-Atom Core-Level Shift in GaAs(111)A-2\times 2
- III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High $\kappa$ Dielectrics