Atomic Force Microscopic Nanolithography on Hafnium Oxide Thin Film Grown on Si(100)

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概要

• 論文の詳細を見る

• As a high-dielectric-constant material, hafnium oxide is one of the promising gate oxides to replace SiO2 for future applications in microelectronics. By atomic force microscopy (AFM), we investigate the AFM-induced anodic oxidation on a hafnium oxide surface and compare the wet etching property of this local oxide with the as-deposited 3 nm HfO2 film in dilute HF solution. Oxide patterns can be reproducibly fabricated and their protruded feature mainly results from the local oxidation of the Si(100) substrate. The AFM-induced oxide pattern has a higher etch rate than the as-deposited HfO2 film due to a greater amount of oxygen.

• 2006-03-15

著者

• Lo Rong-li

  Department Of Chemistry Graduate School Of Science The University Of Tokyo

• Kwo J.

  Department Of Physics National Tsing Hua University

• Lo Rong-Li

  Department of Physics, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.

• Kwo J.

  Department of Physics, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.

• Lee W.-C.

  Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, R.O.C.

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