Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
スポンサーリンク
概要
- 論文の詳細を見る
Magnesium-doped p-type GaN has been activated by irradiation with photons of 532 nm wavelength from the second harmonic of a Q-switched neodymium-doped ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence levels and irradiation pulse numbers, such a laser-induced activation process resulted in a hole concentration about the same as that obtained through the conventional thermal activation technique. Temperature measurement revealed that the laser-induced process is very unlikely to be thermal. It was speculated that the process might involve the photon-induced breaking of the H–Mg bonds.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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YANG Chih-Chung
Department of Electrical Engineering and Graduate Institute of Electro-Optical Engineering, National
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Ma Kung-jeng
Department Of Mechanical Engineering Chung Cheng Institute Of Technology
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Lee Chia-ming
Department Of Electrical Engineering National Central University
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Liao Chi-chih
Department Of Electrical Engineering And Graduate Institute Of Electro-optical Engineering National
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Cheng Yung-chen
Department Of Electrical Engineering And Graduate Institute Of Electro-optical Engineering National
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Chou Chang-cheng
Department Of Electrical Engineering National Central University
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Feng Shih-Wei
Department of Electrical Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C.
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Feng Shih-Wei
Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan, R.O.C.
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Yang Chih-Chung
Department of Electrical Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C.
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Lin Yen-Sheng
Department of Mechanical Engineering, Chung Cheng Institute of Technology, Tahsi, Taoyuan, Taiwan, R.O.C.
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Lin Yen-Sheng
Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan
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Liao Chi-Chih
Department of Electrical Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C.
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Ma Kung-Jeng
Department of Mechanical Engineering, Chung Cheng Institute of Technology, Tahsi, Taoyuan, Taiwan, R.O.C.
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Cheng Yung-Chen
Department of Electrical Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C.
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Lee Chia-Ming
Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, R.O.C.
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Chou Chang-Cheng
Department of Electrical Engineering, National Central University, Chung-Li, Taiwan, R.O.C.
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