Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector

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概要

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• In recent decades, metal-semiconductor-metal (MSM) photodetector for optical fiber communication applications have been studied extensively. The dark current in MSM PD is an important parameter that can be reduced by schottky barrier enhancement and fabrication process. By employing a benzocyclobuten (BCB) sidewall passivation process, the leakage issue between Schottky metal fingers and mesa sidewalls can be avoided. Moreover, the parasitic capacitance can also be decreased due to the low dielectric constant of BCB. The BCB passivation process decreases the dark current density from 11 nA/μm2 to 5.7 pA/μm2.

• 2005-04-15

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Shi Jin-wei

  Department Of Electrical Engineering National Central University

• Lin Don-ming

  Department Of Electrical Engineering National Central University

• Chiu Wei-yu

  Department Of Electrical Engineering National Central University

• Wu Yen-shian

  Department Of Electrical Engineering National Central University

• Chen Shu-han

  Department Of Electrical Engineering National Central University

• Chyi Jen-inn

  Department Of Electrical Engineering National Central University

• Huang Fan-hsiu

  Department Of Electrical Engineering National Central University

• Huang Fan-Hsiu

  Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C

• Chen Shu-Han

  Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C

• Wu Yen-Shian

  Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C

• Chyi Jen-Inn

  Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C

• Chiu Wei-Yu

  Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C

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