Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector

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概要

• 論文の詳細を見る
• 2005-04-30

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Shi Jin-wei

  Department Of Electrical Engineering National Central University

• CHIU Wei-Yu

  Department of Electrical Engineering, National Central University

• HUANG Fan-Hsiu

  Department of Electrical Engineering, National Central University

• WU Yen-Shian

  Department of Electrical Engineering, National Central University

• LIN Don-Ming

  Department of Electrical Engineering, National Central University

• CHEN Shu-Han

  Department of Electrical Engineering, National Central University

• CHYI Jen-Inn

  Department of Electrical Engineering, National Central University

• Chiu Wei-yu

  Department Of Electrical Engineering National Central University

関連論文

• InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
• InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
• The low-k BCB passivation layer on the GaN HEMTs
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
• The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
• Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
• InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices
• Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
• Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model
• High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
• Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
• Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures

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