Chan Yi-jen | Department Of Electrical Engineering National Central University
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概要
関連著者
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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Chan Y‐j
Dept. Of Electrical Engineering National Central University
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Shi Jin-wei
Department Of Electrical Engineering National Central University
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HUANG Fan-Hsiu
Department of Electrical Engineering, National Central University
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Chiu Wei-yu
Department Of Electrical Engineering National Central University
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Huang Fan-hsiu
Department Of Electrical Engineering National Central University
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Wang Wen-kai
Department Of Electrical Engineering National Central University
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CHIU Wei-Yu
Department of Electrical Engineering, National Central University
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WU Yen-Shian
Department of Electrical Engineering, National Central University
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LIN Don-Ming
Department of Electrical Engineering, National Central University
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CHYI Jen-Inn
Department of Electrical Engineering, National Central University
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Lin Don-ming
Department Of Electrical Engineering National Central University
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Wu Yen-shian
Department Of Electrical Engineering National Central University
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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CHAN Yi-Jen
Dept. of Electrical Engineering, National Central University
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Yang Shih-cheng
Department Of Electrical Engineering National Central University Jungli
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Chiu Hsien-chin
Department Of Electrical Engineering National Central University
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Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
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Chen H‐c
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Cheng H‐c
National Tsing Hua Univ. Hsinchu Twn
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Sato Takuro
Niigata Institute Of Technology
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Cheng Huang‐chung
Nano Electronics And Display Technology Lab. Department Of Electronics Engineering And Institute Of
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Lin Ching-huao
Department Of Electrical Engineering National Central University
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Sato Takuro
Department Of Information And Electronics Engineering Niigata Institute Of Technology
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Sato Takahide
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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CHENG Huang-Chung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHIU Hsien-Chin
Department of Electronic Engineering, Chang Gung University
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CHEN Shu-Han
Department of Electrical Engineering, National Central University
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Lai Y‐l
National Changhua Univ. Education Changhua Twn
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Lin Dong-ming
Department Of Electrical Engineering National Central University
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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YANG Shih-Cheng
Department of Electronic Engineering, Chang Gung University
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LIN Cheng-Kuo
Department of Electrical Engineering, National Central University
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HUANG Jung-A
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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LAI Yong-Lin
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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WU Janne-Wha
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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Hsieh Meng-wei
Department Of Electrical Engineering National Central University
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Chen Shu-han
Department Of Electrical Engineering National Central University
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Wu J‐w
National Sun Yat‐sen Univ. Kaohsiung Twn
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Cheng Huang-chung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
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Huang Jung-a
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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Sato T
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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LAI Hong-Hsin
Department of Information and Electronics Engineering, Niigata Institute of Technology
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KUO Chin-Wei
Department of Electrical Engineering, National Central University
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Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
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Kuo Chin-wei
Department Of Electrical Engineering National Central University
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Hwu Ming-jyh
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Lai Hong-hsin
Department Of Information And Electronics Engineering Niigata Institute Of Technology
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Takagi Shigetaka
Tokyo Inst. Of Technol. Tokyo Jpn
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WU Janne-Wha
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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LIN Ray-Ming
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Lin Ray-ming
Department Of Electrical Engineering National Central University
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WU Yen-Shiang
Department of Electrical Engineering, National Central University
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LIN Dong-Ming
Department of Electrical Engineering, National Central University
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Chiu H‐c
National Central Univ. Jungli Twn
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LIN Po-Chen
Department of Electrical Engineering, National Central University
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CHEN Guan-Ting
Department of Electrical Engineering, National Central University
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Chien Feng-Tso
R&D Dept. Chino-Excel Technology Corp.
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Shieh Jia-lin
Department Of Electrical Engineering National Central University
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CHAI Chun-Yi
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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CHAI Chung-Yi
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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GUO Jan-Dar
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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CHAN Shih-Hsiumg
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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Hslao Chao-chih
Department Of Electrical Engineering National Central University
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Yang S‐c
Department Of Electrical Engineering National Central University Jungli
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Chien Feng-tso
R&d Dept. Chino-excel Technology Corp.
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Lin Po-chen
Department Of Electrical Engineering National Central University
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Hsin Yue-ming
Department Of Electrical Engineering National Central University
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Chen Guan-ting
Department Of Electrical Engineering National Central University
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PAN Jen-Wei
Department of Electrical Engineering, National Central University
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Pan Jen-wei
Department Of Electrical Engineering National Central University
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Chan Shih-hsiumg
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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HWU Ming-Jyh
Department of Electrical Engineering, National Central University Jungli
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CHANG Yu-Jung
Department of Electrical Engineering, National Central University
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Chang Yu-jung
Department Of Electrical Engineering National Central University
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HSIAO Chao-Chih
Department of Electrical Engineering, National Central University
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WU Chia-Song
Department of Electrical Engineering, National Central University
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LIN Chun-Hong
Materials Research Laboratories, Industrial Technology Research Institute
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Lin Chun-hong
Materials Research Laboratories Industrial Technology Research Institute
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Guo Jan-dar
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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Wu C‐s
Compaq Computer Corp. Texas Usa
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HANG Fan-Hsiu
Department of Electrical Engineering, National Central University
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WANG Hsin-Pin
Department of Electrical Engineering, National Central University
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Wang Hsin-pin
Department Of Electrical Engineering National Central University
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Hang Fan-hsiu
Department Of Electrical Engineering National Central University
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Tang Denny
Taiwan Semiconductor Manufacturing Company
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Chiu Hsien-chin
The Department Of Electrical Engineering National Central University
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Hsieh Meng-Wei
Department of Electrical Engineering, National Central University, ChungLi, Taiwan 32054, R.O.C.
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Huang Fan-Hsiu
Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C
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Chang Liann-Be
Department of Electrical Engineering, Chung Cheng Institute of Technology, Tashi Taoyuan, Taiwan 335, R.O.C.
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Tseng Huai-Yuan
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Hwu Ming-Jyh
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
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Lo Po-Yuan
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Pei Zing-Way
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Hwang Jiunn-Jye
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Yang Shih-Cheng
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
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Chen Shu-Han
Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C
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Wu Yen-Shian
Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C
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Chiu Hsien-Chin
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
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Chyi Jen-Inn
Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C
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Chan Yi-Jen
Department of Electrical Engineering, Nation Central University, Chungli, Taiwan 32054, Republic of China
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Chiu Wei-Yu
Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C
著作論文
- InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
- InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
- The low-k BCB passivation layer on the GaN HEMTs
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
- Extraction of an Empirical Temperature-Dependence InGaP/GaAs HBT Large-Signal Model
- High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures