Hwu Ming-jyh | Department Of Electrical Engineering Chung Cheng Institute Of Technology

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概要

• 同名の論文著者
• Department Of Electrical Engineering Chung Cheng Institute Of Technologyの論文著者

関連著者

• Hwu Ming-jyh

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• Chang Liann-be

  Department Of Applied Physics Chung-cheng Institute Of Technology

• Yang Shih-cheng

  Department Of Electrical Engineering National Central University Jungli

• HWU Ming-Jyh

  Department of Electrical Engineering, National Central University Jungli

• Chiu Hsien-chin

  Department Of Electrical Engineering National Central University

• CHANG Liann-Be

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Chang Liann

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• CHIU Hsien-Chin

  Department of Electronic Engineering, Chang Gung University

• LIN Jengping

  Department of Electronic Engineering, Chang Gung University

• YANG Shih-Cheng

  Department of Electronic Engineering, Chang Gung University

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

• Lin Jengping

  Department Of Electronic Engineering Chang Gung University

• Hwu M‐j

  National Central Univ. Jungli Twn

• Chang Liann-Be

  Department of Electrical Engineering, Chung Cheng Institute of Technology, Tashi Taoyuan, Taiwan 335, R.O.C.

• Hwu Ming-Jyh

  Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.

• Yang Shih-Cheng

  Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.

• Chiu Hsien-Chin

  Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.

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著作論文

• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

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