YANG Shih-Cheng | Department of Electronic Engineering, Chang Gung University
スポンサーリンク
概要
関連著者
-
YANG Shih-Cheng
Department of Electronic Engineering, Chang Gung University
-
Yang Shih-cheng
Department Of Electrical Engineering National Central University Jungli
-
Chan Yi-jen
Department Of Electrical Engineering National Central University
-
CHIU Hsien-Chin
Department of Electronic Engineering, Chang Gung University
-
Chan Y‐j
Dept. Of Electrical Engineering National Central University
-
Chiu Hsien-chin
Department Of Electrical Engineering National Central University
-
CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
-
Wang Jer-chyi
Nanya Technology Corporation Hwa-ya Technology Park
-
Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
-
Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
-
CHAN Yi-Jen
Dept. of Electrical Engineering, National Central University
-
Chiu H‐c
National Central Univ. Jungli Twn
-
PENG Shing-Kan
Department of Electronic Engineering, Chang Gung University
-
WONG Jian-Yi
Department of Electronic Engineering, Chang Gung University
-
Yang Shih-cheng
Department Of Electronic Engineering Chang Gung University
-
Yang S‐c
Department Of Electrical Engineering National Central University Jungli
-
Peng Shing-kan
Department Of Electronic Engineering Chang Gung University
-
HWU Ming-Jyh
Department of Electrical Engineering, National Central University Jungli
-
Hwu Ming-jyh
Department Of Electrical Engineering Chung Cheng Institute Of Technology
-
Chiu Hsien-chin
The Department Of Electrical Engineering National Central University
-
LAI Chao-Sung
Department of Electronic Engineering, Chang Gung University
-
Chiu Hsien-Chin
Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.
著作論文
- Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications