Yang S‐c | Department Of Electrical Engineering National Central University Jungli
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概要
- YANG Shin-Chengの詳細を見る
- 同名の論文著者
- Department Of Electrical Engineering National Central University Jungliの論文著者
関連著者
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CHAN Yi-Jen
Dept. of Electrical Engineering, National Central University
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Chiu H‐c
National Central Univ. Jungli Twn
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Yang Shih-cheng
Department Of Electrical Engineering National Central University Jungli
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Chan Y‐j
Dept. Of Electrical Engineering National Central University
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Yang S‐c
Department Of Electrical Engineering National Central University Jungli
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Chiu Hsien-chin
The Department Of Electrical Engineering National Central University
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CHIU Hsien-Chin
the Department of Electrical Engineering, National Central University
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CHAN Yi-Jen
the Department of Electrical Engineering, National Central University
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Chan Yi-jen
The Department Of Electrical Engineering National Central University
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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Chiu Hsien
Dept. Of Electronic Engineering Chang Gung University
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CHIU Hsien-Chin
Department of Electronic Engineering, Chang Gung University
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CHIEN Feng-Tso
the R&D DEPT., Chino-Excel Technology Corp.
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Yang Shin-Cheng
the Department of Electrical Engineering, National Central University
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CHEN Chii-Wen
Ming-Hsin Institute of Technology
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YANG Shih-Cheng
Department of Electronic Engineering, Chang Gung University
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Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
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Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
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Chen C‐w
National Chiao Tung Univ. Hsinchu Twn
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Lin Hao-hsiung
The Department Of Electrical Engineering National Taiwan University
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Yang Shih-Cheng
the Department of Electrical Engineering, National Central University
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Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
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Chiu Hsien-chin
Department Of Electrical Engineering National Central University
著作論文
- Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)