High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• A high barrier Schottky gate on InGaP/InGaAs doped-channel FETs(DCFETs) provides a high current density, high gate-to-drain breakdown voltage and a better linear operation over a wide gate bias range. However, these doped-channel devices are limited by a large parasitic resistance associated with a 20 nm thick undoped InGaP layer benbeath the gate metal. In this study, we inserted a Si δ-doped layer inside this high bandgap undoped InGaP layer to reduce parasitic resistances and to enhance device DC and RF power performance. These modified DCFETs (M-DCFETs) demonstrated an output power density of 204 mW/mm, a power-added efficiency of 45%, and a linear power gain of 18.3dB for an 1 mm gate-width device under a 2.4 GHz operation. These characteristics suggest that doped-channel FETs with a Si δ-doped layer provide a good potential for high power microwave device applications.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• CHAN Yi-Jen

  Dept. of Electrical Engineering, National Central University

• Chiu H‐c

  National Central Univ. Jungli Twn

• CHIU Hsien-Chin

  the Department of Electrical Engineering, National Central University

• CHAN Yi-Jen

  the Department of Electrical Engineering, National Central University

• Yang Shih-cheng

  Department Of Electrical Engineering National Central University Jungli

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

• Yang S‐c

  Department Of Electrical Engineering National Central University Jungli

• Lin Hao-hsiung

  The Department Of Electrical Engineering National Taiwan University

• Yang Shih-Cheng

  the Department of Electrical Engineering, National Central University

• Chiu Hsien-chin

  The Department Of Electrical Engineering National Central University

• Chan Yi-jen

  The Department Of Electrical Engineering National Central University

関連論文

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• High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
• High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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