Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

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概要

• 論文の詳細を見る
• 2004-01-15

著者

• Chan Yi-jen

  Department Of Electrical Engineering National Central University

• CHANG Liann-Be

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Chang Liann-be

  Department Of Applied Physics Chung-cheng Institute Of Technology

• CHIU Hsien-Chin

  Department of Electronic Engineering, Chang Gung University

• YANG Shih-Cheng

  Department of Electronic Engineering, Chang Gung University

• Yang Shih-cheng

  Department Of Electrical Engineering National Central University Jungli

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

• HWU Ming-Jyh

  Department of Electrical Engineering, National Central University Jungli

• Hwu Ming-jyh

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• Chiu Hsien-chin

  Department Of Electrical Engineering National Central University

• Chiu Hsien-Chin

  Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.

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