Impurity Gettering Effect in Pr_2O_3-Added InGaAs Liquid Phase Epitaxy

概要

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InGaAs epilayers were grown on semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr_2O_3 added into the growth melt during the epitaxial process for the first time. Without the growth melt baking process, the corresponding Hall measurements indicate that the background concentration of these InGaAs-grown layers will decrease from a value of 1.6×10^<16> cm^<-3> to 2.0×10^<15> cm^<-3>. Their corresponding 77 K mobility also increases significantly from a value of 15321 cm^2/V・s to 32171 cm^2/V・s. The X-ray diffraction measurements, secondary ion mass measurements (SIMS) and photoluminescence (PL) spectra of Pr_2O_3-added InGaAs epitaxial layers all demonstrate that the grown layers exhibit pure crystalline quality. Finally, InGaAs/InGaAs/InP pin diodes were fabricated, and a smaller leakage current and better response for the Pr_2O_3-added samples were reported.
社団法人応用物理学会の論文
1997-12-15