Properties of Thermal Gadolinium Oxide Films on Silicon
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概要
- 論文の詳細を見る
The formation and electrical characteristics of thermal gadolinium (Gd) oxide films were investigated. A good uniform interface formed by proper treatment was observed by transmission electron microscopy (TEM) examination. The dielectric constant of the thermal Gd oxide films was approximately 10 from capacitance–voltage measurements. The X-ray diffraction (XRD) pattern of the thermal Gd oxide (Gd2O3) films showed that they had a cubic structure. The Gd oxides that were oxidized at higher temperatures exhibited smaller grain boundaries than those oxidized at lower temperatures. The grain boundary size of the Gd oxides significantly affects the leakage property. A good Gd oxide quality can be obtained when the thermal oxidation temperature is above 900°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
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Kuei Ping-yu
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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HORNG Kuo-Yang
Chung Shan Institute of Science and Technology
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Ko Hong-hsi
Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University
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Chang Liann-Be
Department of Electronic Engineering, Chang Gung University, Kueishan-Taoyuan 333, Taiwan, R.O.C.
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Kuei Ping-Yu
Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tahsi-Taoyuan 335, Taiwan R.O.C.
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Ko Hong-Hsi
Department of Electrical Engineering, Chung-Cheng Institute of Technology, National Defense University, Tahsi-Taoyuan 335, Taiwan R.O.C.
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Ko Hong-Hsi
Department of Computer Science and Information Engineering, Nan Kai Institute of Technology, Caotun, Nantou 542, Taiwan, R.O.C.
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