Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Chang L‐b
Chung Cheng Inst. Technol. Taoyuan Twn
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Chang Liann-be
Department Of Electronic Engineering Chang-gung University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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JIANG Gwo-Cherng
Department of Applied Physics, Chung Cheng Institute of Technology
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CHANG Yih
Department of Applied Physics, Chung Cheng Institute of Technology
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JUANG Yung-Der
Department of Physics and Mathematics Education, Tainan Normal College
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LU Su
Department of Applied Physics, Chung Cheng Institute of Technology
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Lu S
Wuhan Univ. Wuhan Chn
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Chang Y
Ritdisplay Corp. Hsinchu Twn
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Juang Yung-der
Department Of Physics And Mathematics Education Tainan Normal College
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Chang Yih
Department Of Applied Physics Chung Cheng Institute Of Technology:(present Address) Department Of Me
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Jiang G‐c
Chinese Air Force Acad. Kaoshiung Twn
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