Characterization of Praseodymium-doped InP Epilayers Grown by Liquid-Phase Epitaxy

概要

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The various degrees of incorporation of praseodymium (Pr) into InP during liquid-phase epitaxial growth from an In-rich solution were investigated by double-crystal X-ray diffraction, Hall effect, and low-temperature photoluminescence (PL) measurements to investigate the effect of Pr concentration of structural, electrical, and optical properties. The lattice mismatch varies slightly with increasing Pr concentration in the growth melts. This variation in lattice mismatch with increasing Pr concentration is observed together with the shift of the PL emission energy. Examinations of the electrical property reveal that all the Pr-doped samples exhibit n-type conduction. Depending on the extent of Pr doping in the growth melts, InP epilayers have carrier concentrations ranging from 10^<17> cm^<-3> to 10^<16> cm^<-3> and mobilities varying from 1330 to 3800 cm^2/V・s. It is also revealed that the impurities are gettered by Pr ions during liquid-phase epitaxial growth but the Pr-related defects formed in high Pr-doped melts may act as scattering centers and cause carries mobilities to decrease. It is found that epitaxial growth from the melt with 0.25-0.29 wt% Pr produces of the epitaxial layers highest quality. No intra-4f-shell transition line is observed from InP layers even at very high Pr concentrations.
社団法人応用物理学会の論文
1996-04-15