Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
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概要
- 論文の詳細を見る
A method for surface passivation using both phosphorus sulphide/ammonia sulphide [P2S5/(NH4)2Sx] and hydrogen fluoride (HF) solutions has shown great effectiveness for the reduction of InAs and InSb substrate surface oxides. In comparison with samples treated by P2S5/(NH4)2Sx or HF solutions alone, the surface layer produced by the new passivation treatment has a high stability against oxidation even after an 18 h baking treatment at a temperature of 300°C in N2 ambient. In addition, the barrier heights of Ag/n-InAs and Ag/n-InSb Schottky diodes can still reach as high as 0.37 and 0.19 eV, respectively, even though the Ag/n-InAs and Ag/n-InSb diodes were baked for 18 h at 300°C.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-02-15
著者
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Lin Ray-ming
Department Of Electrical Engineering National Central University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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WANG Hung-Tsung
Department of Electrical Engineering, Chung-Cheng Institute of Technology
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Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
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Wang Hung-Tsung
Department of Electrical Engineering, Chung-Cheng Institute of Technology, Tahsi, Taoyuan, Taiwan, R.O.C.
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