Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-15

著者

• LIN Ray-Ming

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Lin R‐m

  Chang Gung Univ. Tao‐yuan Twn

• Lin Ray-ming

  Department Of Electrical Engineering National Central University

• LEE Si-Chen

  Department of Electrical Engineering Graduate Institute of Electronics Engineering, National Taiwan

• Lee Si-chen

  Department Of Electrical Engineering National Taiwan University

• Lee Si-chen

  Department Of Electrical Engineering & Graduate Institute Of Electronics Engineering National Ta

関連論文

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• Dispersion relations of localized surface plasmon polaritons in a plasmonic thermal emitter
• Coupling of surface plasmons between two silver films in a plasmonic thermal emitter
• Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
• Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector
• Angle Position Detection Using a Novel Double Hollow Four Quadrant Orientation Detector for Application to Pattern Recognition
• Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
• AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
• High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy
• Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector
• 100K Operated Photovoltaic InAs/GaAs Quantum-Dot Infrared Photodetector with Uniform Dot Density
• High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector
• In(Ga)As Quantum Rings for Terahertz Detectors
• The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy
• AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
• High-Performance Narrow-Bandwidth Multicolor InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector
• Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
• In(Ga)As Quantum Rings for Terahertz Detectors
• Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer

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