On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• CHANG Liann-Be

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• LIN Ray-Ming

  Department of Electronic Engineering and Green Technology Research Center, Chang Gung University

• Hsieh Li-zen

  Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University

• Lin R‐m

  Chang Gung Univ. Tao‐yuan Twn

• Chang L‐b

  Chung Cheng Inst. Technol. Taoyuan Twn

• Chang Liann-be

  Department Of Applied Physics Chung-cheng Institute Of Technology

• JENG Ming-Jer

  Department of Electronic Engineering, St. John's & St. Mary's Institute of Technology

• Kuei Ping-yu

  Department Of Electrical Engineering Chung-cheng Institute Of Technology National Defense University

関連論文

• Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
• Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
• Gettering Properties in Praseodymium-Added Crystal Growth
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
• Palladium Diffusion Transport in n-Type GaAs
• Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
• Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
• Properties of Thermal Gadolinium Oxide Films on Silicon
• Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
• The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
• Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
• AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
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• Rapid Thermal Post-Metallization Annealing in Thin Gate Oxides
• Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
• Study of the Fourier-Transform Infrared Spectra of InAs/GaAs Quantum Dot Superlattices for Far-Infrared Photodetectors
• High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
• Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
• On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy
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• Kinetic Analysis of Antibody–Antigen Interactions using Phase-Detection-Based Surface Plasmon Resonance Sensor System
• Gettering Properties in Praseodymium-Added Crystal Growth
• Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
• Growth Evolution of ZrO2 from Deposited Zr Metal during Thermal Oxidation

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