Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
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概要
- 論文の詳細を見る
- 2010-07-25
著者
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LAI Mu-Jen
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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LIN Ray-Ming
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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HUANG Chou-Shuang
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Lin Ray-ming
Department Of Electrical Engineering National Central University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Huang Chou-shuang
Department Of Electronic Engineering And Green Technology Research Center Chang Gung University
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Lai Mu-jen
Department Of Electronic Engineering And Green Technology Research Center Chang Gung University
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Lin Ray-ming
Department Of Electronic Engineering And Green Technology Research Center Chang Gung University
関連論文
- Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
- Surface Passivation Using P_2S_5/(NH_4)_2S_x and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
- Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
- Gettering Properties in Praseodymium-Added Crystal Growth
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Oxygen and Hydrogen Implanted Oxidation Enhancement of A1_Ga_As/A1_Ga_As Distributed Bragg Reflector Structure
- On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
- Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy
- Palladium Diffusion Transport in n-Type GaAs
- Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
- Barrier Height Enhancement of AlGaN/GaN Schottky Diodes by P_2S_5/(NH_4)_2S_x Surface Treatments
- Properties of Thermal Gadolinium Oxide Films on Silicon
- Effects of a Metal Film and Prism Dielectric on Properties of Surface Plasmon Resonance in a Multilayer System
- The Influence of Metal Film Thickness on Wave Properties of Surface Plasma Waves
- Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
- Impurity Gettering Effect in Pr_2O_3-Added InGaAs Liquid Phase Epitaxy
- Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
- Study of the Fourier-Transform Infrared Spectra of InAs/GaAs Quantum Dot Superlattices for Far-Infrared Photodetectors
- High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Temperature Characteristics of High Modulation Rate Platinum-Diffused AlGaInP Resonant-Cavity Light-Emitting Diodes
- On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
- Properties of Thermal Gadolinium Oxide Films on Silicon
- Etching Selectivity and Surface Profile of GaN in the Ni, SiO2 and Photoresist Masks Using an Inductively Coupled Plasma
- Kinetic Analysis of Antibody–Antigen Interactions using Phase-Detection-Based Surface Plasmon Resonance Sensor System
- Gettering Properties in Praseodymium-Added Crystal Growth
- Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
- Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer